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MAX853ESA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC853

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MPC853T

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MPC853TEC

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MZ853

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NDH853N

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTE853

IntegratedCircuitLowPower,NarrowBand,FMIFSystem

Description: TheNTE853isalowpowernarrowbandFMIFsystemwhichincludes:Oscillator,Mixer,LimitingAmplifier,QuadratureDiscriminator,ActiveFilter,Squelch,ScanControlandMuteSwitch.TheNTE853isdesignedforuseinFMdualconversioncommunicationsequipment. Features: ●LowD

NTE

NTE Electronics

詳細(xì)參數(shù)

  • 型號(hào)：

    FX853

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    DC-DC Converter Applications

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SMD
23+
NA
15659
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INFINEON
23+
8000
只做原裝現(xiàn)貨
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INFINEON
23+
7000
詢價(jià)
Hirose
2020+
N/A
8
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Hirose
22+
NA
8
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HRS
24+
SMD
64580
原裝現(xiàn)貨假一賠十
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23+
2X30P-0.6 3000
10000
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HIROSE/廣瀨
2508+
/
273494
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HRS
24+
2X30P-0.6
6000
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HRS
ROHS
13352
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更多FX853供應(yīng)商 更新時(shí)間2025-4-5 17:00:00

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