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IRFM450

SimpleDriveRequirements

IRF

International Rectifier

IRFMA450

POWERMOSFETTHRU-HOLE(TablessTO-254AA)

IRF

International Rectifier

IRFMA450

SimpleDriveRequirements

IRF

International Rectifier

IRFN450

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.415ohm,Id=12A)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

POWERMOSFETSURFACEMOUNT(SMD-1)

RDS(on)0.415? ID12A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establ

IRF

International Rectifier

IRFN450

SimpleDriveRequirements

IRF

International Rectifier

IRFP450

N-CHANNEL500V-0.33ohm-14A-TO-247PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.33? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRFP450

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP450

14A,500V,0.400Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP450

StandardPowerMOSFET-N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Lowpackageinductance(

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號:

    FXT450

  • 功能描述:

    兩極晶體管 - BJT -

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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更多FXT450供應(yīng)商 更新時間2025-4-7 15:16:00