| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description TheG2009Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET Description TheG200P04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET Description TheG200P04D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G200P04S2；Package：SOP-8DUAL；Dual P-Channel Enhancement Mode Power MOSFET Description TheG200P04S2usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG2012usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ?Powerswitch ?DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：G2012；Package：DFN2/2-6L；N-Channel Enhancement Mode Power MOSFET Description TheG2012AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ?Powerswitch ?DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET Description TheG2014usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ?Powerswitch ?DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD | ||
Marking：N2014；Package：DFN2/2；N-Channel Enhancement Mode Power MOSFET Description TheG2014Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. AEC-Q101Qualified Application ?Powerswitch ?DC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導體 | GOFORD |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_靜噪放大 （LN）_寬頻帶放大
- 封裝形式：
直插封裝
- 極限工作電壓：
- 最大電流允許值：
0.1A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-11
- vtest：
0
- htest：
999900
- atest：
0.1
- wtest：
0.625
詳細參數(shù)
- 型號：
G20
- 制造商：
VPC
- 制造商全稱：
VPC
- 功能描述：
Protective Cover, G20, Receiver
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP Power |
24+ |
N/A |
12000 |
一級代理保證進口原裝正品假一罰十價格合理 |
詢價 | ||
WESTCODE |
23+ |
模塊 |
900 |
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢! |
詢價 | ||
FSC |
23+ |
TO3P |
9526 |
詢價 | |||
哈里斯 |
06+ |
TO-247 |
3500 |
原裝 |
詢價 | ||
H |
24+ |
TO247 |
3000 |
詢價 | |||
VISHAY |
24+/25+ |
343 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | |||
NVIDIA |
08+ |
BGA |
1 |
詢價 | |||
INF |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
哈里斯 |
23+ |
TO-247 |
3000 |
全新原裝 |
詢價 | ||
MNC |
2016+ |
DIP20 |
8850 |
只做原裝,假一罰十,公司專營變壓器,濾波器! |
詢價 |
