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G20N60B3D

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

G20N60B3

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
H
24+
TO247
3000
詢價(jià)
哈里斯
23+
TO-247
3000
全新原裝
 詢價(jià)
HARRIS
23+
TO-3P
5000
原裝正品,假一罰十
 詢價(jià)
2017+
TO3P
6528
只做原裝正品假一賠十!
 詢價(jià)
FSC
24+
TO247
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHILD/仙童
TO-3P
40
現(xiàn)貨庫(kù)存
 詢價(jià)
23+
TO-3P
65480
詢價(jià)
FAIRCHILD/仙童
2447
TO-3P
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
Freescale(飛思卡爾)
2022+
60000
原廠原裝,假一罰十
 詢價(jià)
FAIRCHILD/仙童
22+
TO-247
6000
十年配單,只做原裝
 詢價(jià)
更多G20N60B3D供應(yīng)商 更新時(shí)間2025-4-26 16:30:00

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