G30N60中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
G30N60規(guī)格書詳情
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
? 63A, 600V at TC= 25°C
? Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C
? Short Circuit Rating
? Low Conduction Loss
? Hyperfast Anti-Parallel Diode
?
產品屬性
- 型號：
G30N60
- 制造商：
FAIRCHILD
- 制造商全稱：
Fairchild Semiconductor
- 功能描述：
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
哈里斯HARRIS |
23+24 |
TO-3P |
9860 |
原廠原包裝。終端BOM表可配單。可開13%增值稅 |
詢價 | ||
FAIRCHI |
2018+ |
TO247 |
6528 |
承若只做進口原裝正品假一賠十! |
詢價 | ||
INTERSIL |
23+ |
TO247 |
9526 |
詢價 | |||
INFINEON |
20+ |
TO-247 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
公司只做原裝，可來電咨詢 |
詢價 | ||
FAIRCHILD/仙童 |
2022+ |
TO-247 |
12888 |
原廠代理 終端免費提供樣品 |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
FAIRCHILD |
16+ |
TO-3PL |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
英飛凌 |
23+ |
3P |
20000 |
正品原裝貨價格低 |
詢價 | ||
Infineon(英飛凌) |
2021/2022+ |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 |
