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G30N60中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

G30N60
廠商型號(hào)

G30N60

功能描述

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

100.45 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

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數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-4-29 16:05:00

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G30N60規(guī)格書詳情

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49345.

Features

? >100kHz Operation At 390V, 30A

? 200kHz Operation At 390V, 18A

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125°C

? Low Conduction Loss

? Temperature Compensating SABER Model

? ?www.intersil.com

產(chǎn)品屬性

  • 型號(hào):

    G30N60

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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