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G4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRF

International Rectifier

G4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRF

International Rectifier

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRF

International Rectifier

IRG4BC30F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
SOT-263
9518
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢(xún)購(gòu)!
 詢(xún)價(jià)
IR
23+/24+
TO-263
9865
原裝MOS管(場(chǎng)效應(yīng)管).
 詢(xún)價(jià)
IOR
20+
TO263
20500
汽車(chē)電子原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
APEC/富鼎
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
IR
SOT-263
8378
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
IR
22+
SOT-263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
IR
23+
SOT-263
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
23+
SOT-263
7000
詢(xún)價(jià)
IR
24+
TO-220
48
詢(xún)價(jià)
IR
23+
TO-220
10000
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
更多G4BC30FD-S供應(yīng)商 更新時(shí)間2025-3-20 16:21:00

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