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NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX5322

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EH

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX5322EH

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EH-AZ

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

NX5322EK

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW)structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thesedevicesaredesignedforapplicationupto1.25Gb/s. FEATURES ?OpticaloutputpowerPo=5.0mW ?Lowthresholdcurrentlth=7mA ?Differential

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX5322EK

LASERDIODE

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s, InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5322Seriesisa1310nmMultipleQuantumWell(MQW) structuredFabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.These devicesaredesignedforapplicationupto1.25Gb/s. APPLICATIONS ?S

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX5322EK-AZ

1310nmFOR156Mb/s,622Mb/s,1.25Gb/s,InGaAsPMQW-FPLASERDIODE

CEL

California Eastern Labs

PA5322

100dB,24-Bit,192kHzStereoAudioCODEC

PROTEC

Protek Devices

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11256
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2382
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更多G5322供應(yīng)商 更新時(shí)間2025-4-6 8:30:00