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GAL22V10D-20LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJNI

AllDevicesDiscontinued

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJNI

GAL22V10DeviceDatasheet

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LJNI

ProductChangeNotifications(PCNs)havebeenissuedtodiscontinuealldevicesinthisdatasheet.

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchl

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10D-20LPI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

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更多GAL22V10D-20LR供應(yīng)商 更新時間2025-5-20 15:33:00