GAN190-650FBE中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a

DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior

performance.

2. Features and benefits

? Enhancement mode - normally-off power switch

? Ultra high frequency switching capability

? No body diode

? Low gate charge, low output charge

? Qualified for standard applications

? ESD protection

? RoHS, Pb-free, REACH-compliant

? High efficiency and high power density

? Low package inductance and low package resistance

3. Applications

? High power density and high efficiency power conversion

? AC-to-DC converters, totem pole PFC

? DC-to-DC converters

? Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

? Datacom and telecom (AC-to-DC and DC-to-DC) converters

? Motor drives

? Solar (PV) inverters

? Class D audio amplifiers, TV PSU and LED drivers