GC9941分立半導(dǎo)體產(chǎn)品的二極管-射頻規(guī)格書PDF中文資料

DESCRIPTION

Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metallization, these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements.

This series of devices meets RoHS requirements per EU Directive 2002/95/EC.

KEY FEATURES

■ Monolithic design for lowest parasitics

■ Low Conversion Loss

■ Suitable for applications to 26.5 GHz

■ Excellent Noise Figure

■ Available in low, medium and high barrier heights

■ Can be supplied as monolithic devices for hybrid applications or as packaged devices

■ RoHS Compliant1

APPLICATIONS/BENEFITS

■ Mixers

■ Level Detectors

■ Phase Detectors