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零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

GRF2011

BroadbandLinearGainBlock0.05to3.8GHz

GUERRILLA

Guerrilla RF, Inc.

GRHI-2011

ASSEMBLYDRAWINGHIGHIMPACTROCKERSWITCH1.124x.550PANEL

CWIND

CW Industries

H2011U

4&6TumblerPowerSwitchlocks

Features/Benefits ?Positivedetent ?Multi-poleandmulti-position ?Snap-togetherassembly ?Powerswitching

CK-COMPONENTS

C&K Components

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    GDM2011.BLACK

  • 制造商:

    Hirschmann Electronics GmbH & Co Kg

  • 功能描述:

    PLUG FREE 2+E WAY

  • 制造商:

    HIRSCHMANN

  • 功能描述:

    PLUG, FREE, 2+E WAY

  • 功能描述:

    RECTANGULAR POWER CONNECTOR, RECEPTACLE, 2POS;

  • Series:

    -;

  • Gender:

    Receptacle; No. of

  • Contacts:

    2; Contact

  • Gender:

    Socket; Connector

  • Mounting:

    Cable; Contact

  • Termination:

    Screw; Contact

  • Material:

    Brass; Contact

  • Plating:

    Tin; Voltage

  • AC:

    250V ;RoHS

  • Compliant:

    Yes

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HIRSCHMANN
150
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HIRSCHMANN
24+
con
10000
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HIRSCHMANN
24+
con
2500
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PRX
23+
300A800V
120
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23+
模塊
355
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PRX
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10000
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原廠
2023+
模塊
600
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PRX
23+
MODULE
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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PRX
23+
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7300
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BELDEN
2447
SMD
100500
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更多GDM2011.BLACK供應(yīng)商 更新時(shí)間2025-5-17 16:06:00