| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET(Vdss=400V,Rds(on)=1.8ohm,Id=2.6A) Through-HolePackags TO-220FullPak(FullyIsolated) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplica | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thir | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplica | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.5A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
替換型號
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
A |
24+ |
DIP-6 |
113 |
詢價 | |||
GTM |
23+ |
NA |
39960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
MICROCHIP |
1725+ |
QFN |
6528 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價 | ||
23+ |
DIP8 |
3880 |
正品原裝貨價格低 |
詢價 | |||
IR |
22+ |
DIP4 |
5000 |
進口原裝!現(xiàn)貨庫存 |
詢價 | ||
IR |
22+ |
DIP4 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
DIP4 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP4 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
DIP4 |
7000 |
詢價 | |||
NS |
23+ |
QFN |
1005 |
優(yōu)勢庫存 |
詢價 |
相關(guān)規(guī)格書
更多- GE-721
- GE-723
- GE-725
- GE-7400
- GE-7404
- GE-7408
- GE-74123
- GE-74145
- GE-74154
- GE-7417
- GE-74193
- GE-7420
- GE-7430
- GE-7441
- GE-7448
- GE-7473
- GE-7475
- GE-7485
- GE-7490
- GE-761
- GE-793
- GE-812
- GE-822
- GE-962
- GE-973
- GEC-274
- GEC-276
- GEC-279
- GEC-280
- GEC-282
- GEC-285
- GEC-287
- GEC-289
- GEC-290
- GEC-292
- GEC-295
- GEC-298
- GEC-3
- GEC-300
- GEC-302
- GEC-304
- GEC-311
- GEC-313
- GEC-315
- GEC-317
相關(guān)庫存
更多- GE-722
- GE-724
- GE-730
- GE-7402
- GE-7406
- GE-7410
- GE-7413
- GE-74150
- GE-7416
- GE-74192
- GE-74196
- GE-7427
- GE-7432
- GE-7447
- GE-7451
- GE-7474
- GE-7476
- GE-7486
- GE-7492
- GE-792
- GE-794
- GE-818
- GE-961
- GE-972
- GE-984
- GEC-275
- GEC-278
- GEC-28
- GEC-281
- GEC-284
- GEC-286
- GEC-288
- GEC-29
- GEC-291
- GEC-293
- GEC-296
- GEC-299
- GEC-30
- GEC-301
- GEC-303
- GEC-31
- GEC-312
- GEC-314
- GEC-316
- GEC-318
