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IR-820

ImageRejectionMixers

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成電路河北博威集成電路有限公司

IRF820

N-CHANNELPOWERMOSFETS

FEATURES ●LowerRDS(ON) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowerinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF820

N-CHANNEL500V-2.5ohm-2.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=2.5? ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALAN

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

IRF820

N-CHANNELEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs2and2.5AMPERESrDS(on)=3OHM450and500VOLTS rDS(on)=4OHM450VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

IRF820

N-ChannelPowerMOSFETs,3.0A,450V/500V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF820

PowerMOSFET(Vdss=500V,Rds(on)=3.0ohm,Id=2.5A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRF820

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF820

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforcommercial-industrialapplicationsatpowerdissipationlev

VishayVishay Siliconix

威世科技威世科技半導體

IRF820

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF820

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=2.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max) ·FastSwitchingSpeed ·SimpleDriveRequirements APPLICATIONS ·Highcurrent,highspeedswitching ·Swithmodepowersupplies(smps) ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    GI820

  • 制造商：

    Vishay Semiconductors

  • 功能描述：

    Diode Switching 50V 5A 2-Pin Case P600

供應(yīng)商型號品牌批號封裝庫存備注價格
GE
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
GI
23+
NA
390
專做原裝正品,假一罰百!
 詢價
NULL
24+
SOP-16
3200
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
 詢價
Vishay General Semiconductor -
25+
P600
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
GENERALSE
24+
35200
一級代理/放心采購
 詢價
GI821
94
94
詢價
GS
24+
原廠封裝
65250
支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!
 詢價
VISHAY/威世
23+
P600
52500
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
GENERAL SEMICONDUCTOR
2023+
SMD
2230
安羅世紀電子只做原裝正品貨
 詢價
GI
22+
DIP24
5000
進口原裝!現(xiàn)貨庫存
 詢價
更多GI820供應(yīng)商 更新時間2025-4-15 17:36:00

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