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SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-PHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

詳細(xì)參數(shù)

  • 型號：

    GLS29EE512-70-4C-EHE

  • 功能描述：

    電可擦除可編程只讀存儲器 64K X 8 70ns

  • RoHS：

    否

  • 制造商：

    Atmel

  • 存儲容量：

    2 Kbit

  • 組織：

    256 B x 8

  • 數(shù)據(jù)保留：

    100 yr

  • 最大時(shí)鐘頻率：

    1000 KHz

  • 最大工作電流：

    6 uA

  • 工作電源電壓：

    1.7 V to 5.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SOIC-8

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更多GLS29EE512-70-4C-EHE供應(yīng)商 更新時(shí)間2025-5-6 9:00:00

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