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首頁(yè) >GMB624>規(guī)格書(shū)列表

零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
IRF624B	文件：874.76 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF624PBF	文件：283.78 Kbytes Page：9 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF624PBF	文件：149.94 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624S	文件：191.31 Kbytes Page：6 Pages	HEXFETPowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval	IRF International Rectifier	IRF
IRF624S	文件：180.04 Kbytes Page：9 Pages	AvailableinTapeandReel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624S	文件：217.97 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF624SPBF	文件：1.7542 Mbytes Page：9 Pages	HEXFET?PowerMOSFET DESCRIPTION ThirdGenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?availableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAval	IRF International Rectifier	IRF
IRF624SPBF	文件：217.97 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI624B	文件：666.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI624G	文件：170.86 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=1.1ohm,Id=3.4A) Through-HolePackags TO-220FullPak(FullyIsolated)	IRF International Rectifier	IRF

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市易訊博科技有限公司	GMB631PC0.5	Carlo	22+	NA	65	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
深圳市銘威達(dá)電子科技有限公司	GMB631PC60				2797	原裝現(xiàn)貨	詢價(jià)

更多GMB624供應(yīng)商更新時(shí)間2025-4-9 10:08:00

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