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HGP019N04A

Marking:GP019N04A;Package:TO-220;40V N-Ch Power MOSFET

Feature ◇HighSpeedPowerSwitching ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinTelecomsandI

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體(上海)有限公司

HGP095NE4SL

Marking:GP095NE4SL;Package:TO-220;45V N-Ch Power MOSFET

Feature ◇HighSpeedPowerSwitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinTel

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體(上海)有限公司

HGP095NE4SL

Marking:GP095NE4SL;Package:TO-220;45V N-Ch Power MOSFET

Feature ◇HighSpeedPowerSwitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinT

HUNTECKHunteck Semiconductor

恒泰柯半導(dǎo)體恒泰柯半導(dǎo)體(上海)有限公司

IRGPS60B120KDP

Marking:GPS60B120KD;Package:TO-274AA;INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Super-247Package. ?Lead-Free Benefits ?BenchmarkEfficiencyfo

IRF

International Rectifier

RT9161A-40PX

Marking:GP-;Package:SOT-89;300/500mA Low Dropout Linear Voltage Regulator

GeneralDescription TheRT9161/Aisa300/500mAfixedoutputvoltagelowdropoutlinearregulator.Typicalgroundcurrentisapproximately110μA,fromzerotomaximumloadingconditions.Widerangeofavailableoutputvoltagefitsmostofapplications.Built-inoutputcurrent-limitingmosttherma

RichTekRichtek Technology Corporation

立锜科技立锜科技股份有限公司

RT9261A-38PB

Marking:GP-***;Package:SOT-25;VFM Step-up DC/DC Converter

GeneralDescription TheRT9261SeriesareVFMStep-upDC/DCICswithultralowsupplycurrentbyCMOSprocessandsuitableforusewithbattery-poweredinstruments. TheRT9261ICconsistsofanoscillator,aVFMcontrolcircuit,adrivertransistor(LXswitch),areferencevoltageunit,ane

RichTekRichtek Technology Corporation

立锜科技立锜科技股份有限公司

STGP10H60DF

Marking:GP10H60DF;Package:TO-220;Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10HF60KD

Marking:GP10HF60KD;Package:TO-220;10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10HF60KD

Marking:GP10HF60KD;Package:TO-220;10 A - 600 V - short-circuit rugged IGBT

Features ■Lowon-voltagedrop(VCE(sat)) ■Operatingjunctiontemperatureupto175°C ■LowCres/Ciesratio(nocrossconduction susceptibility) ■Tightparameterdistribution ■Ultrafastsoft-recoveryantiparalleldiode ■Short-circuitrugged Applications ■Motordrives ■Highfre

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NB37LZ

Marking:GP10NB37LZ;Package:TO-220;10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號(hào):

    GP140

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質(zhì):

    功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BDW83C,

  • 最大耗散功率:

    150W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-70

  • vtest:

    100

  • htest:

    999900

  • atest:

    15

  • wtest:

    150

詳細(xì)參數(shù)

  • 型號(hào):

    GP

  • 制造商:

    Nordic Power i Stromstad

  • 功能描述:

    Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
OSRAM/歐司朗
23+
SMD
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
OSRAM/歐司朗
23+
SMD
6500
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
MURATA/村田
25+
SMD
8650000
詢價(jià)
OSRAM/歐司朗
2023+
SMD
70000
十五年行業(yè)誠(chéng)信經(jīng)營(yíng),專(zhuān)注全新正品
詢價(jià)
SIG
23+
SOT23-6
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢價(jià)
XX
22+
QFN16
50000
只做正品原裝,假一罰十,歡迎咨詢
詢價(jià)
XX
24+
QFN16
10000
全新原裝現(xiàn)貨庫(kù)存
詢價(jià)
24+
N/A
76000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
WJ
24+
SOT23
113
現(xiàn)貨供應(yīng)
詢價(jià)
H1
4
4
詢價(jià)
更多GP供應(yīng)商 更新時(shí)間2025-4-1 9:30:00