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GT100P06KA

P-Channel Enhancement Mode Power MOSFET

Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT100P06KA

P-Channel Enhancement Mode Power MOSFET

Description TheGT100P06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT100P06K

P-ChannelEnhancementModePowerMOSFET

Description TheGT100P06Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

NP100P06PDG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P06PLG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=6.0m?Max.(VGS=-10V,ID=-50A) RDS(on)=7.8m?Max.(VGS=-4.5V,ID=-50A) ?Lowinputcapacitance:Ciss=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P06PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=7.8mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SILVERMICRO
23+
標(biāo)準(zhǔn)封裝
5000
原廠授權(quán)一級(jí)代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
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銀茂微
23+
MODULE
4500
專營(yíng)國(guó)產(chǎn)功率器件
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HAMAT
23+
SIP
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
Gowanda Electronics
24+
徑向 垂直(開放式)
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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更多GT100P06KA供應(yīng)商 更新時(shí)間2025-3-15 13:00:00

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