GTRA362002FC中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and a

thermally-enhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input matched

? Asymmetrical Doherty design

- Main: P3dB = 85 W Typ

- Peak: P3dB = 115 W Typ

? Typical Pulsed CW performance, 3500 MHz, 48 V,

combined outputs

- Output power at P3dB = 200 W

- Efficiency = 60

- Gain = 12.5 dB

? Capable of handling 10:1 VSWR @50 V, 30 W (WCDMA)

output power

? Human Body Model Class 1A, (per ANSI/ESDA/JEDEC

JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant