H01N60I中文資料華昕數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
H01N60I規(guī)格書(shū)詳情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
? 1A, 600V, RDS(on)=8?@VGS=10V
? Low Gate Charge 15nC(Typ.)
? Low Crss 4pF(Typ.)
? Fast Switching
? Improved dv/dt Capability
產(chǎn)品屬性
- 型號(hào)：
H01N60I
- 制造商：
HSMC
- 制造商全稱(chēng)：
HSMC
- 功能描述：
N-Channel Power Field Effect Transistor
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
QFN5 |
10000 |
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
AP |
23+ |
TO-263 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢(xún)價(jià) | ||
ST |
23+ |
QFP |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún) |
詢(xún)價(jià) | ||
TELEGARTNER |
709 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢(xún)價(jià) | ||||
華昕 |
09+ |
TO-92 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
HSMC |
21+ |
TO-251 |
30000 |
只做正品原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
HSMC |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
MICR |
2023+ |
SSOP16 |
3750 |
全新原廠(chǎng)原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售 |
詢(xún)價(jià) | ||
不明 |
22+ |
SMD |
50000 |
只做正品原裝,假一罰十,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
MOT |
23+ |
DIP |
6000 |
原裝正品假一罰百!可開(kāi)增票! |
詢(xún)價(jià) |
