H07N60E中文資料華昕數(shù)據(jù)手冊PDF規(guī)格書
H07N60E規(guī)格書詳情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
? Robust High Voltage Termination
? Avalanc he Energy Specified
? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSS and VDS(on) Specified at Elevated Temperature
產品屬性
- 型號：
H07N60E
- 制造商：
HSMC
- 制造商全稱：
HSMC
- 功能描述：
N-Channel Power Field Effect Transistor
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
華晰 |
24+ |
NA/ |
850 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
TOS |
24+ |
MSOP-8 |
110 |
詢價 | |||
KEMET |
23+ |
原廠原裝 |
3340 |
全新原裝現(xiàn)貨 |
詢價 | ||
HJ/華昕 |
1822+ |
TO-220F |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
TOSHIBA |
17+ |
SOT-183 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
Knowles(樓氏) |
2021+ |
SMD-8 |
499 |
詢價 | |||
ADI |
2006 |
5/SOT23 |
133 |
自己公司全新庫存絕對有貨 |
詢價 | ||
H |
25+ |
TO- |
12300 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 | ||
TOSHIBA |
16+ |
SOT-183 |
10000 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
ADI/亞德諾 |
2447 |
TO23-5 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |
