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PE1605M2AQ_R1_00001

Marking：HB；Package：DFN1006-3L；Very Low Capacitance Esd Protection

Features ?IEC61000-4-2(ESD):±20kVAir,±15kVContact ?IEC61000-4-4(EFT):40A(5/50ns) ?IEC61000-4-5(Lightning):4A(8/20uS) ?Lowleakagecurrent,maximumof50nAatratedvoltage ?Lowclampingvoltage ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC6124

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PE4207M1Q_R1_00001

Marking：HB；Package：DFN1006-2L；Hi-Surge ESD Protection

Features ?IEC61000-4-2(ESD)：±30kVAir,±15kVContact ?IEC61000-4-4(EFT)：40A(5/50ns) ?IEC61000-4-5(Lightning)：21A(8/20uS) ?Lowleakagecurrent,maximumof1uAatratedvoltage ?Lowclampingvoltage ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PEC2605M1Q_R1_00001

Marking：HB；Package：DFN1006-2L；ESD Protection

Features ?IEC61000-4-2(ESD):±30kVAir,±30kVContact ?IEC61000-4-4(EFT):40A(5/50ns) ?IEC61000-4-5(Lightning):3.5A(8/20uS) ?Lowleakagecurrent,maximumof0.1uAatratedvoltage ?Ultralowcapacitance ?Lowclampingvoltage ?LeadfreeincompliancewithEURoHS2.0 ?Green

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PEC3203S1Q_R1_00001

Marking：HB；Package：DFN0603-2L；ESD PROTECTION

Features ?IEC61000-4-2(ESD):±30kVAir,±30kVContact ?IEC61000-4-4(EFT):40A(5/50ns) ?IEC61000-4-5(Lightning):10A(8/20uS) ?Lowleakagecurrent,maximumof0.5μAatratedvoltage ?Lowclampingvoltage ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PZU5.6BL

Marking：HB；Package：DFN1006-2；Single Zener diodes in a SOD882 package

1.1.Generaldescription General-purposeZenerdiodesinaSOD882leadlessultrasmallSurface-MountedDevice(SMD) plasticpackage. 1.2.Features ?Non-repetitivepeakrerversepowerdissipation:PZSM≤40W ?Totalpowerdissipation:Ptot≤250mW ?Toleranceseries:B:approximately±5

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

SMF19A

Marking：HB；Package：SOD-123；3.3 To 190V 200W Surface Mount Transient Voltage Suppressors (TVS)

Features A CompatiblewithindustrialstandardpackageSOD-123 Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability 200WPeakpowercapabilityat10×1000μswaveform

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

SMF19A

Marking：HB；Package：SOD-123FL；Transient Voltage Suppressors

Features RoHScompliant Glasspassivatedchip 200Wpeakpulsepowercapabilitywitha 10/1000μswaveform,repetitiverate(duty cycle):0.01 Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

TC7SH125F

Marking：HB；Package：SMV；CMOS Digital Integrated Circuits Silicon Monolithic

1.FunctionalDescription ?BusBufferwith3-StateOutput 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highspeedoperation:tpd=3.8ns(typ.)(VCC=5.0V,CL=15pF) (4)Lowpowerdissipation:ICC=2.0μA(max)(Ta=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TC7SH125FU

Marking：HB；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

1.FunctionalDescription ?BusBufferwith3-StateOutput 2.Features (1)AEC-Q100(Rev.H)(Note1) (2)Wideoperatingtemperaturerange:Topr=-40to125(Note2) (3)Highspeedoperation:tpd=3.8ns(typ.)(VCC=5.0V,CL=15pF) (4)Lowpowerdissipation:ICC=2.0μA(max)(Ta=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

74HC1G02GW-Q100

Marking：HB；Package：TSSOP5；2-input NOR gate

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

替換型號

詳細(xì)參數(shù)

  • 型號：

    HB

  • 制造商：

    Greenlee Textron Inc

  • 功能描述：

    SEAL KIT

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Carlo Gavazzi Inc.
2022+
原廠封裝
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
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優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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更多HB供應(yīng)商 更新時(shí)間2025-4-2 15:50:00

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