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HCTS574DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo

Intersil

Intersil Corporation

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS574KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    HC574

  • 制造商：

    ON Semiconductor

供應(yīng)商型號品牌批號封裝庫存備注價格
Texas Instruments
24+
NA
23692
TI優(yōu)勢主營型號-原裝正品
 詢價
24+
SMD
3200
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
 詢價
24+
SOP
300
詢價
PHI
2015+
TSOP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
MOT
SSOP
13
詢價
2020+
SOP
820
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
PHILIPS
SOP
1000
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價
DALLAS
23+
SOP8
1001
全新原裝現(xiàn)貨
 詢價
TEXAS
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
TI
23+
SOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多HC574供應(yīng)商 更新時間2025-4-12 10:12:00

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