HCS00DMSR中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書

Features

? 3 Micron Radiation Hardened SOS CMOS

? Total Dose 200K RAD (Si)

? SEP Effective LET No Upsets: >100 MEV-cm2/mg

? Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/

Bit-Day (Typ)

? Dose Rate Survivability: >1 x 1012 RAD (Si)/s

? Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse

? Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day

(Typ)

? Latch-Up Free Under Any Conditions

? Military Temperature Range: -55oC to +125oC

? Significant Power Reduction Compared to LSTTL ICs

? DC Operating Voltage Range: 4.5V to 5.5V

? Input Logic Levels

- VIL = 30 of VCC Max

- VIH = 70 of VCC Min

? Input Current Levels Ii ? 5?A at VOL, VOH

Description

The Intersil HCS00MS is a Radiation Hardened Quad 2-

Input NAND Gate. A high on both inputs forces the output to

a Low state.

The HCS00MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS00MS is supplied in a 14 lead Ceramic flatpack (K

suffix) or a SBDIP Package (D suffix).