首頁 >HEDM-5505%23B04>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
QuickAssemblyTwoandThreeChannelOpticalEncoders | AVAGOAVAGO TECHNOLOGIES LIMITED 安華高 | AVAGO | ||
QuickAssemblyTwoandThreeChannelOpticalEncoders | AVAGOAVAGO TECHNOLOGIES LIMITED 安華高 | AVAGO | ||
QuickAssemblyTwoandThreeChannelOpticalEncoders | AVAGOAVAGO TECHNOLOGIES LIMITED 安華高 | AVAGO | ||
-60VP-ChannelEnhancementModeMOSFET Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=-60VID=-10A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.11ohm,Id=-18A) | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance VDSS=-55V RDS(on)=0.11? ID=-18A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth | IRF International Rectifier | IRF | ||
ultralowon-resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ULTRALOWONRESISTANCE | IRF International Rectifier | IRF |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
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