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IRFP360

PowerMOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

PowerMOSFET

FEATURES ?Ultralowgatecharge ?Reducedgatedriverequirement ?Enhanced30VVGSrating ?ReducedCiss,Coss,Crss ?Isolatedcentralmountinghole ?DynamicdV/dtrated ?Repetitiveavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/do

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LCPBF

HEXFETPowerMOSFET

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    HEM360A

  • 制造商：

    BOWEI

  • 制造商全稱：

    BOWEI

  • 功能描述：

    Broadband Amplifier

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更多HEM360A供應(yīng)商 更新時(shí)間2025-4-25 17:24:00

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