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HFP5N80中文資料華汕電子器件數(shù)據(jù)手冊PDF規(guī)格書

HFP5N80
廠商型號

HFP5N80

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

665.77 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
企業(yè)簡稱

Huashan華汕電子器件

中文名稱

汕頭華汕電子器件有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-6 23:00:00

HFP5N80規(guī)格書詳情

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features

? 4.8A, 800V(See Note), RDS(on) <2.6?@VGS = 10 V

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

? Equivalent Type:FQP5N80

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