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IRF330

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF330

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

IRF330

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF330

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF330

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrentID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Highvoltage,highspeedapplications ?Off-lineswitchingpowersupplies,UPS,ACandDC motorco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF330

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF330

IRF330-333/IRF730-733MTM/MTP5N35/5N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFE330

REPETITIVEAVALANCHEANDdv/dtRATED

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    HFU330

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Ceramic High Voltage Disc Capacitors, Class 1

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY(威世)
24+
插件,P=12.5mm
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
24+
N/A
48000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
SEMIHOW
23+
TO-251
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
SEMIHOW
25+23+
TO-251
22491
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
POWER
1822+
TO-251
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
SEMIHOW
24+
TO-251
9860
一級代理
 詢價(jià)
POWER
18+
TO-251
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
SEMIHOW
2020+
TO-251
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
SEMIHOW
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
S
I-PAK
22+
6000
十年配單,只做原裝
 詢價(jià)
更多HFU330供應(yīng)商 更新時(shí)間2025-4-9 12:01:00

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