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HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

Hittite

Hittite Microwave Corporation

HMC-ALH244

ACTIVEBIASCONTROLLER

GeneralDescription HMC981isanactivebiascontrollerthatautomaticallyadjuststhegatevoltageofanexternalamplifiertoachieveconstantbiascurrent.ItcanbeusedtobiasanyenhancementanddepletiontypeamplifiersoperatinginClass-AregimewithDrainvoltagesfrom4Vto12Vanddr

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER,24-40GHz

Hittite

Hittite Microwave Corporation

HMC-ALH244

GaAsHEMTMMICLOWNOISEAMPLIFIER

GeneralDescription TheHMC-ALH244isatwostageGaAsMMICHEMTLowNoiseAmplifierdiewhichoperatesbetween24and40GHz.Theamplifierprovides12dBofgain,anoisefigureof3.5dB,andrequiresonly45mAfroma+4Vsupplyvoltage.TheHMC-ALH244amplifierdieisidealforintegrati

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

IRF244

14Aand13A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF244

StaticDrain-SourceOn-Resistance

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP244

15Aand14A,275Vand250V,0.28and0.34Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRFP244

PowerMOSFET(Vdss=250V,Rds(on)=0.28ohm,Id=15A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole

IRF

International Rectifier

IRFP244

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP244

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=15A@TC=25℃ ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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HXY MOSFET(華軒陽(yáng)電子)
23+
SOT-23
190
三極管/MOS管/晶體管 > 數(shù)字晶體管
 詢價(jià)
ST
24+
SOP-16
200000
原裝進(jìn)口正口,支持樣品
 詢價(jià)
ST
25+
SOP-16
16900
原裝，請(qǐng)咨詢
 詢價(jià)
ST
24+
SOIC16
26
詢價(jià)
ST
23+
SOIC16
5000
原裝正品,假一罰十
 詢價(jià)
ST/意法
23+
SOP-16
3609
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
TOHOZIN
ROHS
13352
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
BIWELL
23+
SMD
9868
專做原裝正品,假一罰百!
 詢價(jià)
TOHOZINC
1922+
SMD
3000
絕對(duì)進(jìn)口原裝現(xiàn)貨
 詢價(jià)
BIWELL
25+23+
SMD
11915
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
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更多HKRC244SRTKP供應(yīng)商 更新時(shí)間2025-5-18 10:20:00

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