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LM5819

Surfacemountschottkybarrierrectifier

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

M5819

0.6Ampschottkybarrierrectifier40volts

0.6AmpSchottkyBarrierRectifier40Volts Features ·SchottkyBarrierRectifier ·GuardRingProtection ·LowForwardVoltage ·LowPowerLossForHighEfficiency ·HighCurrentCapability

CHENYIShanghai Lunsure Electronic Tech

商朗電子上海商朗電子科技有限公司

M5819

0.6AmpSchottkyBarrierRectifier40Volts

0.6AmpSchottkyBarrierRectifier40Volts Features ·SchottkyBarrierRectifier ·GuardRingProtection ·LowForwardVoltage ·LowPowerLossForHighEfficiency ·HighCurrentCapability

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

M5819

SurfaceMountSchottkyDiodes

SurfaceMountSchottkyDiodes SMALLSIGNALSCHOTTKYDIODES 1.0AMPERES20-60VOLTS Features: *LowForwardVoltage *FastSwitching *LowSwitchingNoise *IdealforSurfaceMountedApplication

WEITRON

Weitron Technology

MCH5819

MCH5819

MOSFET:N-ChannelSiliconMOSFETSBD:SchottkyBarrierDiode Features ?CompositetypewithanN-channelsiliconMOSFET(MCH3408)andaschottkybarrierdiode(SBS006M)containedin1packagefacilitatinghigh-densitymounting. ?[MOS] 1)LowON-resistance. 2)Ultrahigh-speedswitch

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

MLL5819

1ASurfaceMountSchottkyRectifiers

1ASurfaceMountSchottkyRectifiers Features ?LowprofileinMelf(GL-41)package ?Lowpowerloss,highefficiency ?Lowforwardvoltagedrop;Lowleakagecurrent ?PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ?RoHSCompliant

TAITRON

TAITRON Components Incorporated

MMBD5819

SchottkyDiodes

SchottkyDiodes Features PowerDissipation:PD=300mW CollectorCurrent:IF=1A Collector-BaseVoltage:VR=40V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

PB5819W

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

PACELEADERPACELEADER INDUSTRIAL

霈峰霈峰實(shí)業(yè)有限公司

PRLL5819

Schottkybarrierdiodes

DESCRIPTION ThePRLL5817toPRLL5819typesareSchottkybarrierdiodesfabricatedinplanartechnology,andencapsulatedinSOD87hermeticallysealedglassSMDpackagesincorporatingImplotecTM(1)technology. FEATURES ?Lowswitchinglosses ?Fastrecoverytime ?Guardringprotected ?Herme

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PRLL5819

Schottkybarrierdiodes

DESCRIPTION ThePRLL5817toPRLL5819typesareSchottkybarrierdiodesfabricatedinplanartechnology,andencapsulatedinSOD87hermeticallysealedglassSMDpackagesincorporatingImplotecTM(1)technology. FEATURES ?Lowswitchinglosses ?Fastrecoverytime ?Guardringprotected ?Herme

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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Harris
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25000
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H
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H
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更多HM5819供應(yīng)商 更新時(shí)間2025-4-12 9:00:00