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HM628511HJPI-15

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi Semiconductor

日立日立公司

HM628511HLJP-10

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

HM628511HLJP-12

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

HM628511HLJP-15

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi Semiconductor

日立日立公司

HM628512

4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35μmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

HM628512A

4M SRAM (512 KWORD X 8 BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35μmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

HM628512AI

524288-word x 8-bit High Speed CMOS Static RAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi Semiconductor

日立日立公司

HM628512ALFP-5

4M SRAM (512 KWORD X 8 BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35μmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

HM628512ALFP-5SL

4M SRAM (512 KWORD X 8 BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35μmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

HM628512ALFP-7

4M SRAM (512 KWORD X 8 BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35μmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號:

    HM6285

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    Wide Temperature Range Version 4M High Speed SRAM(512-kword 】 8-bit)

供應(yīng)商型號品牌批號封裝庫存備注價格
HITACHI
17+
SOP
6200
100%原裝正品現(xiàn)貨
詢價
HIT
25+
SOP32
960
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
詢價
RENESAS
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
HIT
05+
原廠原裝
5590
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
HIT
24+/25+
49
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
HIT
01+
SOJ36
3560
全新原裝進(jìn)口自己庫存優(yōu)勢
詢價
HITACHI
23+
SOP
7635
全新原裝優(yōu)勢
詢價
HITACHI
TSOP
650
正品原裝--自家現(xiàn)貨-實(shí)單可談
詢價
HITACHI
24+
SOP32
6980
原裝現(xiàn)貨,可開13%稅票
詢價
HITACHI
16+
SOP32
8800
進(jìn)口原裝大量現(xiàn)貨熱賣中
詢價
更多HM6285供應(yīng)商 更新時間2025-4-24 9:46:00