HMC8142-SXRF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

HMC8142-SX屬于RF/IF射頻/中頻RFID的射頻放大器。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的HMC8142-SX射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

GENERAL DESCRIPTION

The HMC8142 is an integrated E-band gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), medium power amplifier with a temperature compensated on-chip power detector that operates from 81 GHz to 86 GHz. The HMC8142 provides 21 dB of gain, 25 dBm of output power at 1 dB compression, 29 dBm of output third-order intercept, and 26 dBm of saturated output power at 20 power added efficiency (PAE) from a 4 V power supply. The HMC8142 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification before the antenna. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long ribbon on each port.

FEATURES

Gain: 21 dB typical

Output power for 1 dB compression (P1dB): 25 dBm typical

Saturated output power (PSAT): 26 dBm typical

Output third-order intercept (OIP3): 29 dBm typical

Input return loss: 12 dB typical

Output return loss: 8 dB typical

DC supply: 4 V at 450 mA

No external matching required

Die size: 3.039 mm × 1.999 mm × 0.05 mm

APPLICATIONS

E-band communication systems

High capacity wireless backhaul radio systems

Test and measurement