HN58X24512I中文資料日立數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

HN58X24512I is the two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

It realizes high speed, low power consumption and a high level of reliability by employing advanced

MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-

byte page programming function to make it’s write operation faster.

Features

? Single supply: 1.8 V to 5.5 V

? Two-wire serial interface (I2CTM serial bus*1)

? Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)

? Power dissipation:

? Standby: 3 μA (max)

? Active (Read): 2 mA (max)

? Active (Write): 5 mA (max)

? Automatic page write: 128-byte/page

? Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)

? Endurance: 105 Cycles (Page write mode)

? Data retention: 10 Years