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IRFP260

StandardPowerMOSFET-N-ChannelEnhancementMode

Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes

IXYS

IXYS Corporation

IRFP260

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP260

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP260M

N-ChannelMOSFETTransistor

·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP260MPBF

HEXFET?PowerMOSFET

VDSS=200V RDS(on)=0.04? ID=50A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETP

IRF

International Rectifier

IRFP260MPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFP260MPBF

AdvancedProcessTechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFP260N

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HR
23+
TO-220
30000
代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢價(jià)
HR
17+
TO-220
55
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
HR
QQ咨詢
TO-220
117
全新原裝 研究所指定供貨商
 詢價(jià)
HR
23+
TO-220
55
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HR
20+
TO-220
55
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價(jià)
3000
原裝現(xiàn)貨
 詢價(jià)
匯港
20+
DIP其它繼電器
2890
只做原裝現(xiàn)貨繼電器
 詢價(jià)
HKE/匯港
1736+
DIP
8529
專營(yíng)繼電器只做原裝正品假一賠十!
 詢價(jià)
HKE
20+
DIP
15800
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
松下
23+
DIP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多HRM260D供應(yīng)商 更新時(shí)間2025-3-25 14:10:00

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