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IRF634NSTRRPBF

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF634PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634S

PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp

IRF

International Rectifier

IRF634S

AvailableinTapeandReel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidestheh

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF634S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI634

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI634B

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI634G

POWERMOSFET

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    HS-634

  • 制造商:

    Hozan Tool Industrial Co Ltd

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133
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Essentra
22+
NA
168
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HOMSEMI
2022+
TO-220
50000
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HOMSEMI
23+
TO-220
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
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HOMSEMI
23+
TO-220
6800
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日立
24+
DIP
3200
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1815+
CDIP
6528
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S
24+
DIP
2650
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原裝
1922+
CDIP
12600
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90/91
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4534
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更多HS-634供應(yīng)商 更新時(shí)間2025-4-26 10:50:00