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MMBT5551

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

Diotec

Diotec Semiconductor

MMBT5551

TRANSISTOR(NPN)

FEATURES ●ComplementarytoMMBT5401 ●IdealforMediumPowerAmplificationandSwitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

MMBT5551

PNPPlasticEncapsulateTransistor

Features ????????Halogenfreeavailableuponrequestbyaddingsuffix-HF ?CollectorCurrent:ICM=0.6A ?Collector-BaseVoltage:V(BR)CBO=180V ?OperatingAndStorageTemperatures–55OCto150OC ?Capableof0.3WattsofPowerDissipation ?Marking:G1 ?LeadFreeFinish/RoHSCompliant(P

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5551

HighVoltageTransistorsNPNSilicon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

MMBT5551

HIGHVOLTAGETRANSISTORNPNSILICON

HighVoltageTransistor NPNSilicon

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

MMBT5551

NPNPlasticEncapsulateTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT5551

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBT5551

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMBT5401) ?IdealforLowPowerAmplificationandSwitching ?Lead,HalogenandAntimonyFree,RoHSCompliant ?GreenDevice(Notes2and3)

DIODES

Diodes Incorporated

MMBT5551

NPNSiliconEpitaxialPlanarTransistors

NPNSiliconEpitaxialPlanarTransistors forhighvoltageamplifierapplications.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技(東莞)有限公司

詳細(xì)參數(shù)

  • 型號:

    HS5551

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    NPN TRANSISTOR HSOT LAW - Bulk

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5
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SIP
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10000
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9630
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70575
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21+
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12588
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150
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50000
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更多HS5551供應(yīng)商 更新時間2025-4-11 17:29:00