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IQTCQO-250KU

TemperatureCompensatedCrystalOscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCQO-250KX

TemperatureCompensatedCrystalOscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCXO-250

Temperaturecompensatedcrystaloscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IRF250

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

ETCList of Unclassifed Manufacturers

未分類制造商

IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF250

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號:

    HSC250

  • 功能描述:

    線繞電阻器 - 底架安裝 HSC250 100R 5%

  • RoHS:

  • 制造商:

    Vishay/Dale

  • 電阻:

    7 Ohms

  • 容差:

    1 %

  • 功率額定值:

    100 W

  • 溫度系數(shù):

    50 PPM/C

  • 系列:

    RH

  • 工作溫度范圍:

    - 55 C to + 250 C

  • 尺寸:

    46.02 mm Dia. x 46.02 mm W x 88.9 mm L x 44.45 mm H

  • 封裝:

    Bulk

  • 產(chǎn)品:

    Power Resistors Wirewound Aluminum Housed

供應(yīng)商型號品牌批號封裝庫存備注價格
TE
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
TE
24+
con
10000
查現(xiàn)貨到京北通宇商城
詢價
TE
24+
con
2500
優(yōu)勢庫存,原裝正品
詢價
TE
24+/25+
NA
2322
20年芯片代理現(xiàn)貨分銷正品保證
詢價
TE
24+
NA
1040
專注TE品牌原裝正品代理分銷,認準水星電子
詢價
Hirose
2020+
N/A
8
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
Hirose
22+
NA
8
加我QQ或微信咨詢更多詳細信息,
詢價
FAIRCHILD/仙童
23+
TO-252(DPAK)
69820
終端可以免費供樣,支持BOM配單!
詢價
HSMC
22+
TO-220
20000
保證原裝正品,假一陪十
詢價
HUAJING
TO-220
22+
6000
十年配單,只做原裝
詢價
更多HSC250供應(yīng)商 更新時間2025-4-8 9:30:00