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IRF830

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF830

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF

International Rectifier

IRF830

HighPowerFactor/LowTHD

IRF

International Rectifier

IRF830

4.5A500VNCHANNELPOWERMOSFET

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.cconverters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF830issuppliedin

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF830

PowerMOSFET

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES ?Dynamic

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF830

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF830

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF830areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF830

N-ChannelPowerMESHMOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYTMprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvaroussources. ●TypicalRDS(on)=1.35? ●EXTREMELYHIGHdv/dtCAPABILITY ●100AVALAN

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    HSM830G/TR13

  • 制造商：

    Microchip Technology

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝：

    管件

  • 二極管類型：

    肖特基

  • 電流 - 平均整流 (Io)：

    8A

  • 速度：

    快速恢復(fù) =< 500ns，> 200mA（Io）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    DO-215AB，SMC 鷗翼

  • 供應(yīng)商器件封裝：

    DO-215AB

  • 工作溫度 - 結(jié)：

    -55°C ~ 175°C

  • 描述：

    DIODE SCHOTTKY 30V 8A DO215AB

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Microsemi
1942+
N/A
908
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 詢價(jià)
MICROSEMI
1809+
DO-215AB
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
MICROCHIP
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
24+
N/A
70000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
Microchip Technology
25+
DO-215AB
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
MICROCHIP(美國微芯)
24+
DO214AB
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!
 詢價(jià)
Microsemi
16+
DO-214AB
88000
鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
 詢價(jià)
Microsemi
20+
DO-214AB
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
Microsemi
24+
DO-214AB
88000
原裝現(xiàn)貨假一賠十
 詢價(jià)
更多HSM830G供應(yīng)商 更新時(shí)間2025-4-26 10:18:00

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