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HUF76132S3S中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

HUF76132S3S
廠商型號

HUF76132S3S

功能描述

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

文件大小

110.16 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-15 18:23:00

HUF76132S3S規(guī)格書詳情

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET? process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.

Features

? Logic Level Gate Drive

? 75A, 30V

? Ultra Low On-Resistance, rDS(ON)= 0.011?

? Temperature Compensating PSPICE? Model

? Temperature Compensating SABER? Model

? Thermal Impedance SPICE Model

? Thermal Impedance SABER Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    HUF76132S3S

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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SOT263
56000
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3365
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99+
TO-263
800
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FAIRCHILD
18+
SOT263
3872
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SOT263
10000
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1709+
SOT-263
32500
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INTERSIL
0728+
NA
880000
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23+
NA
746
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22+23+
TO-263
26947
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INTERSIL
24+
35200
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