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IRF830

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF830

POWERMOSFET

ETCList of Unclassifed Manufacturers

未分類制造商

IRF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IRF830

Highcurrent,highspeedswitching

Description TheIRF830isanewgenerationofhighvoltageN–ChannelenhancementmodepowerMOSFETsandisobtainedthroughanextremeoptimizationlayoutdesign,inadditionaltopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapability,providesuper

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

IRF830

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF830

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

VDSS=500Volts RDS(on)=1.5Ohms ID=4.0Amperes Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplications suchaspowersupplies,PWM

DCCOM

Dc Components

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HUR830

  • 制造商：

    SIRECTIFIER

  • 制造商全稱：

    Sirectifier Semiconductors

  • 功能描述：

    快速恢復(fù)二極管Fast Recovery Diodes，軟恢復(fù)特性高性能高結(jié)溫超快恢復(fù)外延二極管Soft Recovery Behaviour ，High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes，Tj = -55°C ~ 175°C, Tjm = 175°C。

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Essentra
22+
NA
6487
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RICHCO
新
7005
全新原裝 貨期兩周
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RICHCO
2447
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
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RICHCO
23+
NA
12730
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RICHCO
23+
10000
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FUN-JIN
24+
DIP
2650
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FUN-JIN
23+
DIP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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FUN-JIN
1815+
DIP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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FUN-JIN
2020+
DIP
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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FUN-JIN
2022+
DIP
90000
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更多HUR830供應(yīng)商 更新時(shí)間2025-4-5 10:08:00

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