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IRF1010EZPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010EZS

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZSPBF

AUTOMOTIVEMOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSPBF

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZSTRLP

AdvancedProcessTechnology

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010N

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF1010N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010NL

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    HV1010

  • 制造商：

    Apex Tool Group

  • 功能描述：

    1/2 IN. X 10 FT HI-VIZ ORANGE SERIES 1000 POWER TAPE

  • 制造商：

    Lufkin

  • 功能描述：

    TAPE MEASURE, POWER RETURN, 10FT, 1/2IN; Tape Measure

  • Type：

    Manual; Measuring Range

  • Max：

    10ft; Blade

  • Width：

    0.5"; Case

  • Color：

    Orange; Blade

  • Finish：

    Yellow Clad; Blade

  • Length：

    10ft ;RoHS

  • Compliant：

    NA

供應商型號品牌批號封裝庫存備注價格
ApexToolGroup/CooperTool
新
5
全新原裝 貨期兩周
 詢價
Apex Tool Group/Cooper Tools
2022+
1
全新原裝 貨期兩周
 詢價
CORNELL
20+
電容器
36
就找我吧!--邀您體驗愉快問購元件!
 詢價
Cornell
22+
NA
75
加我QQ或微信咨詢更多詳細信息,
 詢價
CORNELLDUBILIER-CDE
21+
DIP-2
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
MICROCHIP
23+
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
Microchip
22+
SOT2233
9000
原廠渠道,現(xiàn)貨配單
 詢價
Microchip
21+
SOT2233
13880
公司只售原裝,支持實單
 詢價
NEXPERIA/安世
23+
SOD882
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多HV1010供應商 更新時間2025-4-9 16:06:00

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