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IRFR/U9120N

HEXFETPowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9120

5.6A,100V,0.600Ohm,P-ChannelPowerMOSFETs

TheseadvancedpowerMOSFETsaredesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheyareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

Intersil

Intersil Corporation

IRFR9120

PowerMOSFET(Vdss=-100V,Rds(on)=0.60ohm,Id=-5.6A)

DESCRIPTION ThirdGenerationHEXFETsfromInternatioalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9120) ?StraightLead

IRF

International Rectifier

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9120

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR9120

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9120,SiHFR9120) ?Straightlead(IRFU9120,SiHFU9120) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    HV9120P

  • 功能描述：

    開(kāi)關(guān)變換器、穩(wěn)壓器與控制器 HVCMOS 450V 2% Ref

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 輸出電壓：

    1.2 V to 10 V

  • 輸出電流：

    300 mA

  • 輸入電壓：

    3 V to 17 V

  • 開(kāi)關(guān)頻率：

    1 MHz

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    WSON-8

  • 封裝：

    Reel

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SUPERTEXINC
24+
DIP-16P
160
現(xiàn)貨
 詢(xún)價(jià)
01+
DIP16
103
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
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SUPERTEX
新
40
全新原裝 貨期兩周
 詢(xún)價(jià)
SUPERTEX超科
1627+
DIP16
3121
代理品牌
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Supertex
24+
原廠(chǎng)封裝
6394
原裝現(xiàn)貨
 詢(xún)價(jià)
N/A
2447
SMD
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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SUP
21+
DIP
10000
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
23+
DIP16
20000
全新原裝假一賠十
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SUPERTEX
23+
DIP
8555
原廠(chǎng)原裝正品
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SUPERTEX
24+
NA/
801
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
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更多HV9120P供應(yīng)商 更新時(shí)間2025-4-26 14:00:00

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