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IRF120

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF120

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF120

NanosecondSwitchingSpeeds

DESCRIPTION ?DrainCurrentID=8A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.3Ω(Max) ?NanosecondSwitchingSpeeds APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighenergypul

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF120

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFD120

PowerMOSFET(Vdss=100V,Rds(on)=0.27ohm,Id=1.3A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4-pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultip

IRF

International Rectifier

IRFD120

1.3A,100V,0.300Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFD120

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecomb

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    HW120

  • 制造商：

    NTE Electronics

  • 功能描述：

    Res Metal Film 200 Ohm 2% 1/2W ±100ppm/°C Conformal AXL Thru-Hole

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMTEC
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
SAMTEC/申泰
15+
265
詢價
SAMTEC/申泰
2022+
265
原廠原裝,假一罰十
 詢價
SAMTEC
2016+
DIP
2500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
SAMTEC
2016+
DIP
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價
SAMTEC
23+
DIP
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
SAMTEC
25+23+
DIP
53793
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
SAMTEC
22+
DIP
39652
原裝正品現(xiàn)貨
 詢價
SAMTEC
19+
DIP
8650
原裝正品,現(xiàn)貨熱賣
 詢價
SAMTEC
2020
DIP
3300
絕對全新原裝現(xiàn)貨,歡迎來電查詢
 詢價
更多HW120供應(yīng)商 更新時間2025-4-11 9:30:00

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