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IRFR310PBF

HEXFETPOWERMOSFET(VDSS=400V,RDS(on)=3.6廓,ID=1.7A)

IRF

International Rectifier

IRFR310PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR310PBF

PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFR310PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR310TR

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR310TRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR310TRL

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR310TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR310TRLA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR310TRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    HW310

  • 制造商:

    NTE Electronics

  • 功能描述:

    RESISTOR 10KOHM 500mW 2% A

  • 功能描述:

    RESISTOR, 10KOHM, 500mW, 2%, AXIAL LEADE

  • 功能描述:

    RESISTOR, 10KOHM, 500mW, 2%, AXIAL LEADED; Product

  • Range:

    NTE ELECTRONICS - HW Series Metal Film Resistor;

  • Resistance:

    10kohm; Power

  • Rating:

    500mW; Resistance

  • Tolerance:

    2%; Resistor Case

  • Style:

    Axial Leaded; Voltage

  • Rating:

    350V ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    Res Metal Film 10K Ohm 2% 1/2W ±200ppm/°C Conformal AXL Thru-Hole

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SAMTEC
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con
35960
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ESSEMI
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QFN
116
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HITACHI
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HITACHI
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93
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N/A
23+
10000
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NA
582
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73752
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AKM
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更多HW310供應(yīng)商 更新時(shí)間2025-4-5 9:30:00