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HY1N60D

600V / 1.0A N-Channel Enhancement Mode MOSFET

HY

HY ELECTRONIC CORP.

HY1N60M

600V/1.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRFR1N60A

PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A)

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60A

SMPSMOSFET

IRF

International Rectifier

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

IRFR1N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=7?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    HY1N60D

  • 制造商：

    HY

  • 制造商全稱(chēng)：

    HY ELECTRONIC CORP.

  • 功能描述：

    600V/1.0A N-Channel Enhancement Mode MOSFET

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松下
1736+
RELAY
8529
專(zhuān)營(yíng)繼電器只做原裝正品假一賠十!
 詢(xún)價(jià)
24+
N/A
52000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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PANASONIC
23+
DIP
9365
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PANASON
2020+
DIP6
40
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NAIS
23+
DIP6
50
原裝環(huán)保房間現(xiàn)貨假一賠十
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NAIS
1123+
DIP6
50
剛到現(xiàn)貨加微13425146986
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PANASONIC
20+
na
65790
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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PANASONIC
20+
DIP通信繼電器
2890
只做原裝現(xiàn)貨繼電器
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松下
2023+
DIP
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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PANASONIC
24+
DIP6
65200
一級(jí)代理/放心采購(gòu)
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更多HY1N60D供應(yīng)商 更新時(shí)間2025-2-11 18:15:00

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