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HY6N60T

600V / 6.0A N-Channel Enhancement Mode MOSFET

HY

HY ELECTRONIC CORP.

IRF6N60

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRF6N60FP

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeff

SUNTAC

Suntac Electronic Corp.

IRFIB6N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFIB6N60A

PowerMOSFET(Vdss=600V,Rds(on)max=0.75ohm,Id=5.5A)

Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching HighVoltageIsolation=2.5KVRMS? Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacteri

IRF

International Rectifier

IRFIB6N60A

VishaySiliconix

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFIB6N60APBF

HEXFETPowerMOSFET

Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowe

IRF

International Rectifier

IRFIB6N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

KF6N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=5A

KECKEC CORPORATION

KEC株式會社

KF6N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=600V,ID=6A

KECKEC CORPORATION

KEC株式會社

詳細(xì)參數(shù)

  • 型號：

    HY6N60T

  • 制造商：

    HY

  • 制造商全稱：

    HY ELECTRONIC CORP.

  • 功能描述：

    600V/6.0A N-Channel Enhancement Mode MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
56000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
HUAYING
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
HY
24+
DIP
8766
詢價
HY
20+
DIP
88720
紅外全新原裝主營-可開原型號增稅票
 詢價
HongKong
23+
接近反射式
39276
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
AF
23+
SOT-23
122212
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
HanElectricity(瀚源)
23+
-
2445
原裝現(xiàn)貨/專做開關(guān)15年
 詢價
HOOYI
2022+
TO-251
50000
原廠代理 終端免費(fèi)提供樣品
 詢價
HOOYI
23+
TO-251
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
HOOYI
23+
TO-251
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
更多HY6N60T供應(yīng)商 更新時間2025-2-6 11:06:00

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