HYB3164405AJ-60中文資料西門(mén)子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)

This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second generation 64Mbit 0,35μm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405A operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)405A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)405ATL parts have a very low power ?sleep mode“ supported by Self Refresh.

Advanced Information

? 16 777 216 words by 4-bit organization

? 0 to 70 °C operating temperature

? Hyper Page Mode - EDO - operation

? Performance:

? Single + 3.3 V (± 0.3V) power supply

? Low power dissipation:

max. 450 active mW ( HYB 3164405AJ/AT(L)-40)

max. 360 active mW ( HYB 3164405AJ/AT(L)-50)

max. 324 active mW ( HYB 3164405AJ/AT(L)-60)

max. 612 active mW ( HYB 3165405AJ/AT(L)-40)

max. 405 active mW ( HYB 3165405AJ/AT(L)-50)

max. 432 active mW ( HYB 3165405AJ/AT(L)-60)

7.2 mW standby (LVTTL)

3.24 mW standby (LVMOS)

720 μA standby for L-version

? Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh

? Self refresh (L-version only)

? 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405AJ/AT)

4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405AJ/AT)

? 256 msec refresh period for L-versions

? Plastic Package:

P-SOJ-32-1 400 mil HYB 3164(5)400AJ

P-TSOPII-32-1 400 mil HYB 3164(5)400AT(L)