HYM321160GS-70中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module)

The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising eight HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 μF ceramic decoupling capacitors on a PC board.

Advanced Information

? 1 048 576 words by 32-bit organization

(alternative 2 097 152 words by 16-bit)

? Fast access and cycle time

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

? Fast page mode capability with

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

? Single + 5 V (± 10 ) supply

? Low power dissipation

max. 4840 mW active (-60 version)

max. 4400 mW active (-70 version)

CMOS – 44 mW standby

TTL – 88 mW standby

? CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

? 8 decoupling capacitors mounted on substrate

? All inputs, outputs and clock fully TTL compatible

? 72 pin Single in-Line Memory Module

? Utilizes eight 1M × 4-DRAMs in 300 mil SOJ packages

? 1024 refresh cycles /16 ms

? Tin-Lead contact pads (S - version)

? Gold contact pads (GS - version)

? single sided module with 25.4 mm (1000 mil) height