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HM5116400

4,194,304-WORDX4-BITDYNAMICRAM

Description TheHitachiHM5116400Series,HM5117400SeriesareCMOSdynamicRAMsorganized4,194,304-wordx4-bit.Theyemploythemostadvanced0.5mCMOStechnologyforhighperformanceandlowpower.TheHM5116400Series,HM5117400SeriesofferFastPageModeasahighspeedaccessmode.They

HitachiHitachi Semiconductor

日立日立公司

MSM5116400A

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400B

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Bisa4,194,304-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5116400Bachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400C

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Cisa4,194,304-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM5116400Cachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetalC

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400D

4,194,304-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Disa4,194,304-wordx4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Dachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermetal

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400F

4,194,304-Word?4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400F-XXSJ

4,194,304-Word?4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

MSM5116400F-XXTS-K

4,194,304-Word?4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM5116400Fisa4,194,304-word×4-bitdynamicRAMfabricatedinOki’ssilicon-gateCMOStechnology.TheMSM5116400Fachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/double-layermeta

OKIOki Electric Cable Co.,Ltd

沖電線沖電線株式會(huì)社

TC5116400BSJ

4,194,304WORDX4BITDYNAMICRAM

Description TheTC5116400BSJ/BSTisthenewgenerationdynamicRAMorganized4,194,304wordby4bit.TheTC5116400BSJ/BST utilizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Mu

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TC5116400J

4,194,304WORDX4BITDYNAMICRAM

DESCRIPTION TheTC5116400J/FTisthenewgenerationdynamicRAMorganized4,194,304wordby4bit.The TC5116400J/FTutilizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuit techniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser.Multiple

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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SIE
9513
16
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SIE
24+
35200
一級(jí)代理/放心采購(gòu)
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SIEMENS
23+
SOJ
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
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SIE
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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SIE
23+
SOJ
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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SIE
93+
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5585
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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SIE
2206+
SOJ
4178
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
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SIE
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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SIE
23+
原裝正品現(xiàn)貨
10000
SOJ
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SIEMENS
2023+環(huán)保現(xiàn)貨
標(biāo)準(zhǔn)封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
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更多HYZ5116400JAR供應(yīng)商 更新時(shí)間2025-2-24 18:26:00

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