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IDT70P3517S250RM集成電路(IC)的存儲器規(guī)格書PDF中文資料
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廠商型號 |
IDT70P3517S250RM |
參數(shù)屬性 | IDT70P3517S250RM 封裝/外殼為576-BBGA,F(xiàn)CBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 9MBIT PARALLEL 576FCBGA |
功能描述 | 512K/256K x36 SYNCHRONOUS DUAL QDR-II |
封裝外殼 | 576-BBGA,F(xiàn)CBGA |
文件大小 |
873.39 Kbytes |
頁面數(shù)量 |
20 頁 |
生產(chǎn)廠商 | Integrated Device Technology, Inc. |
企業(yè)簡稱 |
IDT |
中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
原廠標識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-2-22 17:51:00 |
人工找貨 | IDT70P3517S250RM價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
IDT70P3517S250RM規(guī)格書詳情
Functional Description
As a memory standard, the (Quad Data Rate) QDR-II SRAM interface has become increasingly common in high performance networking systems. With the QDR-II interface/configuration, memory throughput is increased without increasing the clock rate via the use of two unidirectional buses on each of providing 2 ports of QDR-II makes this a Dual-QDRII Static Ram two ports to transfer data without the need for bus turnaround.
Features
◆ 18Mb Density (512K x 36)
– Also available 9Mb Density (256K x 36)
◆ QDR-II x 36 Burst-of-2 Interface
– Commercial: 233MHz, 250MHz
◆ Two independent ports
– True Dual-Port Access to common memory
◆ Separate, Independent Read and Write Data Buses on each Port
– Supports concurrent transactions
◆ Two-Word Burst on all DPRAM accesses
◆ DDR (Double Data Rate) Multiplexed Address Bus
– One Read and One Write request per clock cycle
◆ DDR (Double Data Rate) Data Buses
– Four word burst data (Two Read and Two Write) per clock on each port
– Four word transfers each of Read & Write per clock cycle per port (four word bursts on 2 ports)
◆ Octal Data Rate
◆ Port Enable pins (E0,E1) for depth expansion
◆ Dual Echo Clock Output with DLL-based phase alignment
◆ High Speed Transceiver Logic inputs
– scaled to receive signals from 1.4V to 1.9V
◆ Scalable output drivers
– Drives HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V
– Output impedance adjustable from 35 ohms to 70 ohms
◆ 1.8V Core Voltage (VDD)
◆ 576-ball Flip Chip BGA (25mm x 25mm, 1.0mm ball pitch)
◆ JTAG Interface - IEEE 1149.1 Compliant
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT70P3517S250RM
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
托盤
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術:
SRAM - 雙端口,同步 QDR II
- 存儲容量:
9Mb(256K x 36)
- 存儲器接口:
并聯(lián)
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
576-BBGA,F(xiàn)CBGA
- 供應商器件封裝:
576-FCBGA(25x25)
- 描述:
IC SRAM 9MBIT PARALLEL 576FCBGA
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
NA |
5650 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IDT |
23+ |
BGAQFP |
8659 |
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢. |
詢價 | ||
IDT |
22+ |
BGA |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IDT |
23+ |
576-FCBGA(25x25) |
9000 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
576-FCBGA25x25 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IDT |
24+ |
576-FCBGA |
3930 |
原裝現(xiàn)貨 |
詢價 | ||
IDT |
16+ |
QFP |
2500 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 | ||
IDT, Integrated Device Techno |
23+ |
576-FCBGA25x25 |
7300 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IDT |
1923+ |
BGAQFP |
1680 |
只做進口原裝!假一罰十!絕對有貨! |
詢價 | ||
IDT |
22+ |
576FCBGA |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |